Избранные публикации по SiC PVT

1. Quality improvement of single crystal 4H SiC grown with a purified β-SiC powder source, Jun Gyu Kim, Eun Jin Jung, Younghee Kim, Yuri Makarov, Doo Jin Choi. Ceramics International 40(3):3953–3959, April 2014.
2. Evaluation of the change in properties caused by axial and radial temperature gradients in silicon carbide crystal growth using the physical vapor transport method. Jun Gyu Kim, Jin Hwan Jeong, Younghee Kim, Yuri Makarov, Doo Jin Choi, Acta Materialia 77:54–59, September 2014.
3. Fabrication of Improved-Quality Seed Crystals for Growth of Bulk Silicon Carbide. M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubova, D. P. Litvin, A. V. Vasiliev, T. Yu. Chemekova, Yu. N. Makarov. Jun 2011, Semiconductors.
4. Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon Crystals. Yu. E. Egorov, Yu. N. Makarov, E. A. Rudinsky, E. M. Smirnov, A. I. Zhmakin. Jan 2011, MRS Online Proceeding Library.
5. Computational Experiment on CVD of SiC: Growth Rate, C/Si Ratio, Parasitic Phase Formation. Andrei N. Vorob'ev, Alexandre E. Komissarov, Maxim V. Bogdanov, Sergey Yu. Karpov, Olga V. Bord, Alexandre I. Zhmakin, Andrei A. Lovtsus, Yuri N. Makarov. Jan 2011, MRS Online Proceeding Library
6. Status of 3 '' 6H SiC bulk crystal growth. Yuri N. Makarov, D. P. Litvin, A.V. Vasiliev, A. S. Segal, S. S. Nagalyuk, H. Helava, M. I. Voronova, K. D. Scherbachov. Apr 2010, Materials Science Forum.
7. Ring waveguide resonator on surface acoustic waves: First experiments. S. V. Biryukov, H. Schmidt, A. V. Sotnikov, M. Weihnacht, T. Yu. Chemekova, Yu. N. Makarov. Jan 2010, Journal of Applied Physics.
8. Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane. Yuri N. Makarov, R. A. Talalaev, A. N. Vorob'ev, Mark S. Ramm, Maxim V. Bogdanov. Jan 2009, Materials Science Forum.
9. Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace. Eugene Y. Tupitsyn, Alexander Galyukov, Maxim V. Bogdanov, Mark S. Ramm, Yuri N. Makarov, Tangali S. Sudarshan, Jan 2009, Materials Science Forum.
10. Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling. Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A. N. Vorob'ev, D. Brovin, D. Bazarevskiy, R. A. Talalaev, Yuri N. Makarov. Jan 2007, Materials Science Forum.
11. Resistivity Distribution in Undoped 6H-SiC Boules and Wafers. Qiang Li, A.Y.Polyakov, Marek Skowronski, Edward K. Sanchez, Mark J. Loboda, Mark A. Fanton, Timothy Bogart, Rick D. Gamble, N. B. Smirnov, Yuri N. Makarov. Jan 2006, Materials Science Forum.