Избранные публикации по графену, биосенсорам и HVPE

  1. M. A. Reshchikov, R. M. Sayeed, Ü. Özgür, D. O. Demchenko, J. D. McNamara, V. Prozheeva, F. Tuomisto, H. Helava, A. Usikov, and Yu. Makarov. Unusual properties of the RY3 center in GaN. Phys. Rev. B 100, 045204 (2019).
  2. A. Usikov, M. Puzyk, S. Novikov, I. Barash, O. Medvedev, A. Roenkov, A. Goryachkin, S. P. Lebedev, A. Zubov, Yu. Makarov, A. A. Lebedev. Electrochemical Treatment of Graphene. Key Engineering Materials, Vol. 799, pp. 197-202, 2019.
  3. S. P. Lebedev, A. Usikov, S. Novikov, E. Shabunina, N. M. Shmidt, I. Barash, A. D. Roenkov, A. A. Lebedev, Yuri N. Makarov. Graphene/SiC Functionalization for Blood Type Sensing Applications. Materials Science Forum, Vol. 924, pp. 909-912, 2018.
  4. Lebedev, S. P.; Davydov, V. Yu.; Usachov, D. Yu.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I.A.; Guschina, E. V.; Dunaevsckiy, M. S.; Vilkov, O. Yu.; Rybkin, A. G.; Lebedev, A. A.; Novikov, S.N.; Makarov, Yu. N. Graphene on silicon carbide as a basis for gas- and biosensor applications. Nanosystems: Physics, Chemistry, Mathematics, 9(1), 95-97 (2018).
  5. Lebedev, A. A. ; Davydov, V. Y. ; Usachov, D. Y. ; Lebedev, S. P. ; Smirnov, A. N. ; Levitskii, V. S. ; Eliseyev, I. A. ; Alekseev, P. A. ; Dunaevskiy, M. S. ; Rybkin, A. G. ; Novikov, S. N. ; Makarov, Yu N. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method. Journal of Physics: Conference Series, 951(1), [012007] (2018).
  6. Sergey P. Lebedev, Alexander Usikov, Sergey Novikov, Eugenia Shabunina, Natalia M. Shmidt, Iosif Barash, Alexander D. Roenkov, Alexander A. Lebedev, Yuri N. Makarov. Graphene/SiC Functionalization for Blood Type Sensing Applications. Materials Science Forum, Vol. 924, pp. 909-912, 2018.
  7. M. A. Reshchikov, J. D. McNamara, A. Usikov, H. Helava, and Yu. Makarov. Two yellow luminescence bands in undoped GaN. Scientific Reports (2018), 8:8091.
  8. A.Y.Polyakov, Jin-HyeonYun, A.S.Usikov, E.B.Yakimov, N.B.Smirnov, K.D.Shcherbachev, H.Helava, Y.N.Makarov, S.Y.Kurin, N.M.Shmidt, O.I.Rabinovich, S.I.Didenko, S.A.Tarelkin, B.P.Papchenko, In-Hwan Lee. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy. Modern Electronic Materials Volume 3, Issue 1, March 2017, Pages 32-39.
  9. O S Medvedev, M V Puzyk, A S Usikov, H Helava, Yu N Makarov. Solar water splitting with III-N nanocolumn structures. Journal of Physics: Conf. Series 917 (2017) 052022.
  10. Alexander Usikov, Ivan Ermakov, Heikki Helava, Sergey Kurin, Alexey Nikiforov, Boris Papchenko, Mike Puzyk, Alexander Polyakov, In-Hwan Lee, and Yuri Makarov. Investigation of water splitting using III-N structures. Phys. Status Solidi B, 1600744 (2017)
  11. M. A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov, V. Prozheeva, I. Makkonen, F. Tuomisto, J. H. Leach, and K. Udwary. Evaluation of the concentration of point defects in GaN.
  12. Alexander Usikov, Alexey Nikiforov, Oleg Khait, Oleg Medvedev, Ivan Ermakov, Boris Papchenko, Mike Puzyk, Andrei Antipov, Iosif Barash, Sergey Kurin, Alexander Roenkov, Heikki Helava, and Yuri Makarov. Investigation of Direct Water Photoelectrolysis Process Using III-N Structures. Materials Science Forum ISSN: 1662-9752, Vol. 897, pp 723-726.
  13. A. Usikov, S. Luryi, A. Nikiforov, H. Helava , Yu. Makarov, M. Gouzman. Photo-Electrochemical Etching in the Process of Direct H2 Generation by Illumination of GaN-Based Material Structures Immersed in Water. International Journal of High Speed Electronics and Systems. Vol. 25, Nos. 1 & 2 (2016) 1640009.
  14. M. A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov, M. V. Puzyk, B. P. Papchenko, “Effect of capping on electrical and optical properties of GaN layers grown by HVPE”, J. Electron. Mater. 45, 2178 (2016).
  15. Reshchikov, M. A. J. D. McNamara, M. Toporkov, V. Avrutin, H. Morkoç, A. Usikov, H. Helava, and Yu. Makarov. Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence. Sci. Rep. 6, 37511
  16. Yu Kurin, A S Usikov, B P Papchenko, H Helava, Yu N Makarov, A S Evseenkov, S A Tarasov, and A V Solomonov. “The efficiency of GaN/AlGaN p-n heterostructures in UV spectral range”. Journal of Physics: Conference Series 741 (2016) 012107.
  17. S Yu Kurin, M V Puzyk, I A Ermakov, A. A. Antipov, I. S. Barash, A. D. Roenkov, V.V. Ratnikov, A S Usikov, B P Papchenko, H.Helava, Yu. N. Makarov, and А Е Chernyakov. “Optical transmission of strained GaN/sapphire structures”. Journal of Physics: Conference Series 741 (2016) 012048.
  18. A D Fomichev, S Yu Kurin, I A Ermakov, M V Puzyk, A S Usikov, H Helava, A Nikiforov, B P Papchenko, Yu N Makarov, and А Е Chernyakov. ” Photoelectrochemical corrosion of GaN -based p-n structures”. Journal of Physics: Conference Series 741 (2016) 012049.
  19. Alexander Usikov, Heikki Helava, Alexey Nikiforov, Michael Puzyk, Boris Papchenko and Yuri Makarov. Photoelectrochemical Corrosion of GaN/AlGaN-Based p-n Structures. American Journal of Applied Sciences, 2016, 13 (7): 845.852.
  20. Alexander Usikov, Sergey Yu. Kurin, Iosif S. Barash, Alexander D. Roenkov, Andrei Antipov, Oleg Khait, Oleg Medvedev, Heikki Helava, Yu.N. Makarov. “HVPE GaN Growth on 4H SiC and Die Dicing” Materials Science Forum (Volume 858), 1198 -1201.
  21. M. A. Reshchikov, J. D. McNamara, F. Zhang, M. Monavarian, A. Usikov, H. Helava, Yu. Makarov, and H. Morkoc Zero-phonon line and fine structure of the yellow luminescence band in GaN. Physical Review B 94, 035201 (2016).
  22. M. A. Reshchikov, J. D. McNamara, A. Usikov, H. Helava, and Yu. Makarov. Optically generated giant traps in high-purity GaN. Physical Review B 93, 081202(R) (2016).
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